RELATIONSHIP BETWEEN DISSOLUTION INHIBITORS AND DISSOLUTION RATE OF RESIST IN CHEMICALLY AMPLIFIED 3-COMPONENT POSITIVE RESIST

For chemically amplified electron beam (EB) resist composed of partial ly tert-butoxycarbonyl (tBOC) protected poly(p- vinylphenol) (PVP), a dissolution inhibitor, and an acid generator, the effect of the dissol ution inhibitors on the dissolution characteristics of resist are inve stigated, As dissolution inhibitors, hydroquinone protected by a tert- butoxycarbonyl group (B-HQ) and isophthalic acid protected by a tert-b utyl group (B-IP) are used. Dissolution inhibitors (B-HQ and B-IP) bec ome dissolution promoters (HQ and IF) after exposure. The dissolution rate of the resist consisting of B-IP was faster than that of B-HQ in the exposed area. pKa of IP is smaller than that of HQ, and the acidit y of IP is higher than that of HQ. Therefore IP enhances the solubilit y of the matrix resin in the alkaline developer, A 0.14 mu m line and space pattern is fabricated at 17.5 mu C/cm(2) using 50 keV EB in the resist consisting of B-IP.