PERFORMANCE OF RESOLUTION ENHANCEMENT TECHNIQUE USING BOTH MULTIPLE EXPOSURE AND NONLINEAR RESIST

Authors
SHIBUYA M KOMATSU M OZAWA T OOKI H
Citation
M. Shibuya et al., PERFORMANCE OF RESOLUTION ENHANCEMENT TECHNIQUE USING BOTH MULTIPLE EXPOSURE AND NONLINEAR RESIST, JPN J A P 1, 33(12B), 1994, pp. 6874-6877
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
33
Issue
12B
Year of publication
1994
Pages
6874 - 6877
Database
ISI
SICI code
Abstract
We have proposed a resolution enhancement lithography technique named NOLMEX. In this paper, we investigate the performance of this method b y using the analytical relationship between line-and-space pattern res olution and NA, and by numerical calculation for isolated hole pattern s. It is confirmed that this technique is useful for both kinds of pat terns. Using the NOLMEX method, a 0.1-mu m-rule pattern can be fabrica ted by optical lithography.