A scattering-type cell projection method is proposed and its character
istics are estimated by simulation and experiment. In this method, a m
ask consisting of thin scatterers and apertures is used to shape an el
ectron beam. Thus, this method has advantages over the conventional ce
ll projection method. First, a high aspect ratio is not necessary to f
abricate the mask. Thus, the mask pattern is easily fabricated and its
experimental dimensional accuracy is better than 0.2 mu m. Second, th
e simulated heat deposition on the mask drastically decreases. In addi
tion, simulation and experiment show good contrast of over 10(5) relat
ed to using a limiting aperture to intercept scattered electrons. As a
result, this method is considered to be a key technology in future el
ectron beam lithography systems.