POLARIZATION DEPENDENCE OF ELECTRIC-FIELD INTENSITY DISTRIBUTIONS IN PHOTORESIST FILMS

The polarization dependence of the electric field intensity distributi ons in photoresist films has been studied by simulation. S-polarized i llumination produces higher image contrast than P-polarized illuminati on in air. However, due to the high refractive indices of photoresist films, the difference of the image contrasts formed by S- and P-polari zed illuminations almost disappears in the photoresist films. The refl ectivities from nonplanar substrates strongly depend on the polarizati on of illumination. The reflection from nonplanar substrates can be st rongly suppressed by using P-polarized illumination.