OXIDE ETCHING USING SURFACE-WAVE COUPLED PLASMA

Oxide etching was evaluated using a new high-density plasma, which was based on surface wave coupled plasma (SWP). This plasma, applicator c an uniformly generate microwave plasma over a large area, and it can b e formed without quartz tubes or plates. The plasma characteristics of SWP were investigated at the low-pressure region. At the First stage, oxide etching characteristics were evaluated. The SWP oxide etcher ha d a high etching rate and achieved quarter-micron window etching of ve rtical profile.