Y. Miyakawa et al., THERMAL-DESORPTION SPECTROSCOPY AND X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF CFX LAYER DEPOSITED ON SI AND SIO2, JPN J A P 1, 33(12B), 1994, pp. 7047-7052
Thermal reactions between a fluorocarbon (CFx) layer formed with C4F8
magnetomicrowave plasma and Si and SiO2 are studied by thermal. desorp
tion spectroscopy (TDS). Atomic compositions and core spectra of the C
Fx layer are measured by temperature-programmed X-ray photoelectron sp
ectroscopy (TP-XPS) with concomitant desorption gas species analysis b
y quadrupole mass spectrometer. The TDS study reveals that the primary
reaction products are SiF4 in Si and SiF4 and CO in SiO2, and F gener
ated from the CFx layer is a primary reactive species contributing to
the formation of the reaction products not only in Si but also in SiO2
. The TP-XPS study reveals that the drastic decrease of F/C ratio agre
es with the desorption of SiF4 and CO.