THERMAL-DESORPTION SPECTROSCOPY AND X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF CFX LAYER DEPOSITED ON SI AND SIO2

Thermal reactions between a fluorocarbon (CFx) layer formed with C4F8 magnetomicrowave plasma and Si and SiO2 are studied by thermal. desorp tion spectroscopy (TDS). Atomic compositions and core spectra of the C Fx layer are measured by temperature-programmed X-ray photoelectron sp ectroscopy (TP-XPS) with concomitant desorption gas species analysis b y quadrupole mass spectrometer. The TDS study reveals that the primary reaction products are SiF4 in Si and SiF4 and CO in SiO2, and F gener ated from the CFx layer is a primary reactive species contributing to the formation of the reaction products not only in Si but also in SiO2 . The TP-XPS study reveals that the drastic decrease of F/C ratio agre es with the desorption of SiF4 and CO.