FORMATION OF SIN FILMS BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION USING [(CH3)(2)N]3SIN3

An organic source gas, tris-dimethyl-amino-silyl-azide (TDSA, [(CH3)(2 )N]3SiN3), was newly synthesized and utilized for the deposition of a passivation film of sub-half-micrometer devices. Deposition temperatur e dependence of the film formed by plasma-enhanced chemical vapor depo sition (PECVD) using TDSA was investigated and step coverage of the TD SA film was examined. As a result, it was clarified that hydrocarbon c ontent in the film decreased with increasing deposition temperature. T he bottom step coverage of the films formed using TDSA was greatly imp roved compared to that of the conventional silicon nitride film.