ESTIMATION OF CARRIER SUPPRESSION BY HIGH-ENERGY BORON-IMPLANTED LAYER FOR SOFT ERROR REDUCTION

Effect of charge-carrier suppression by a high-energy boron-implanted layer has been investigated by ion-induced-current measurement using h igh-energy proton microprobes, Proton microprobes at 1.3 and 2.0 MeV h ave been irradiated normal to the n(+)p diode to generate electron-hol e pairs. The collection of charge carriers induced by microprobe irrad iation could be reduced by a buried layer formed by boron implantation . It was found that the rate of charge collection depended on tie impl antation dose but not un the depth of tile buried layer.