BEHAVIOR OF DEFECTS INDUCED BY LOW-ENERGY IONS IN SILICON FILMS

Behavior of defects induced by low-energy (5 keV at maximum) argon ion s or protons in 600 nm thin silicon crystals has been investigated. A significant amount of defects diffuse from the damaged; surface layers to the deeper regions even at room temperature, and act as the carrie r traps and the scattering centers that affect the electrical properti es of the films. Most of the defects disappear after annealing at 300 degrees C. Electrical and thermal properties of the defects depend on the creation rate of Frenkel pairs.