FABRICATION AND CHARACTERIZATION OF CROSS-EDGE-STRUCTURED VERTICAL FIELD EMITTER ARRAYS

Authors
ISHIZAKI M GAMO H KANEMARU S ITOH J
Citation
M. Ishizaki et al., FABRICATION AND CHARACTERIZATION OF CROSS-EDGE-STRUCTURED VERTICAL FIELD EMITTER ARRAYS, JPN J A P 1, 33(12B), 1994, pp. 7171-7175
Citations number
5
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
33
Issue
12B
Year of publication
1994
Pages
7171 - 7175
Database
ISI
SICI code
Abstract
New field emitter arrays (FEAs), called cross-edge-structured vertical FEAs, were fabricated and characterized. Chromium (Cr) emitters and m olybdenum/Cr emitters were tested. The anode-current fraction was 50%, being improved in comparison with that of disk-edge FEAs. Threshold v oltage of the anode current was a low voltage of 25 V. From the light emission pattern, divergent angle was estimated to be 9 degrees.