ON THE ELECTRON-MOBILITY IN QUASI-ONE-DIMENSIONAL STRUCTURES FABRICATED BY HOLOGRAPHIC LITHOGRAPHY AND WET CHEMICAL ETCHING

We report the transport phenomena at 77 K on the shallow and deep mesa -etched multiple wires with geometrical wire width of 250 to 400 am fa bricated by laser holography and wet chemical etching of a GaAs/AlGaAs single quantum well structure. Magnetoresistance indicates that the m obility in a wire with weak confinement is decreased by the etching pr ocess. Photoluminescence spectra indicate that the electron temperatur e in a deep-etched wire with strong confinement is increased by the el ectric field more than that in the two-dimensional structure or wires with the weak confinement. This suggests the increase of the mobility and/or the energy relaxation time in one-dimensional structures.