ANNEALING BEHAVIOR OF IRRADIATION-INDUCED DAMAGE IN AN ALGAAS GAAS HETEROSTRUCTURE BY LOW-ENERGY-ELECTRON BEAM/

Evaluating the low-temperature mobility of the tyro-dimensional electr on gas in AlGaAs/GaAs heterostructures, we have studied the nature of the damage induced in the heterostructure by low-energy electron-beam irradiation up to 7.5 keV at room temperature and at 90 K. The isochro nal annealing revealed that at around 450 K the degraded mobility reco vered quickly in the 90-K-irradiated sample and gradually in the sampl e irradiated at room temperature. However, the quality of both samples did not recover completely upon annealing at 675 K. The electron-beam irradiation was speculated to cause the formation of As-related defec ts.