FORMATION OF INGAAS QUANTUM DOTS ON GAAS MULTI-ATOMIC STEPS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH

Authors
KITAMURA M NISHIOKA M OSHINOWO J ARAKAWA Y
Citation
M. Kitamura et al., FORMATION OF INGAAS QUANTUM DOTS ON GAAS MULTI-ATOMIC STEPS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH, JPN J A P 1, 34(8B), 1995, pp. 4376-4379
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
34
Issue
8B
Year of publication
1995
Pages
4376 - 4379
Database
ISI
SICI code
Abstract
Aligned InGaAs quantum dots as small as 20 nm were naturally formed at multi-atomic step edges by metalorganic chemical vapor deposition gro wth. In addition, it was found that anisotropic structure of InGaAs al ong the step edges toward the [110]A direction appears with the increa se of growth time of InGaAs. This phenomenon may be useful in the form ation of quantum wires.