LATERAL-SIZE CONTROL OF TRENCH-BURIED QUANTUM WIRES USING GAAS ALAS SUPERLATTICE LAYERS/

We demonstrated the lateral-size control of GaAs/AlAs trench-buried qu antum wires (QWRs) in the region below 20 nm by using GaAs/AlAs superl attice layers (SLs). Scanning electron microscopy images and photolumi nescence properties of the trench-buried QWRs revealed that the trench width can be controlled by varying the number of SLs and reduced to a bout 13 nm by growing 7 pairs of SLs. The GaAs wires in the trenches h ave a tendency to grow so as to maintain a constant cross-sectional ar ea, which leads to reduction of the energetic broadening of the quantu m sub-levels caused by pattern size fluctuation.