NANOSCALE LITHOGRAPHY WITH ELECTRON EXPOSURE OF SIO2 RESISTS

We report on electron-beam patterned hydrocarbon residues on silicon d ioxide as chemical initiators in high temperature HF vapor etching for the production of nanolithographic masks (similar to 20 nm feature si ze). These are of utility in reactive ion etching based pattern transf er to the underlying substrate and, potentially, as dielectric compone nts in nanoscale devices. Metallic cobalt, deposited through the oxide mask, has been used to generate 12-20 nm wide lines of cobalt silicid e.