NANOSTRUCTURE ALIGNMENT FOR HOT-ELECTRON INTERFERENCE DIFFRACTION DEVICES

Authors
HONGO H SUZUKI J SUHARA M MIYAMOTO Y FURUYA K
Citation
H. Hongo et al., NANOSTRUCTURE ALIGNMENT FOR HOT-ELECTRON INTERFERENCE DIFFRACTION DEVICES, JPN J A P 1, 34(8B), 1995, pp. 4436-4438
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
34
Issue
8B
Year of publication
1995
Pages
4436 - 4438
Database
ISI
SICI code
Abstract
An ultrafine fabrication technique for hot electron interference/diffr action devices was developed, The alignment of two nanostructures by e -beam direct writing before and after crystal growth was reported for the first time. The aligned structure consists of 70 nm pitch grating GaInAs/InP buried structure and 70 nm pitch stripe electrode of Cr/Au.