ONE-DIMENSIONAL QUANTUM ELECTRON AND HOLE STATES IN N-ALXGA1-XAS U-GAAS/U-ALXGA1-XAS CORRUGATED DOUBLE-HETEROJUNCTIONS/

Quasi-one-dimensional quantum electron and hole states are suggested i n modulation-doped n-AlxGa1-xAs/u-GaAs/u-AlxGa1-xAs corrugated double heterojunctions. The interfaces between n-AlxGa1-xAs/u-GaAs and u-GaAs /u-AlxGa1-xAs are saw-tooth corrugated by bends with period 850 Angstr om and bending angle 90 degrees. The thickness of the sandwiched GaAs layer is 150 Angstrom. Quantum-mechanical simulations are performed fo r electrons and holes, The electrons are found to be densely packed in quasi-one-dimensional states located in the convex corner of the GaAs layer near the doped layer of n-AlxGa1-xAs. The hole states are also quasi-one-dimensional and are located in the convex corner of the GaAs layer near the undoped layer of u-AlxGa1-xAs. Consequently, spatial s eparation of ground level electron and hole quantum states can be achi eved.