MULTIPLE NEGATIVE DIFFERENTIAL RESISTANCE DUE TO QUANTUM INTERFERENCEOF HOT-ELECTRON WAVES IN METAL (COSI2) INSULATOR (CAF2) HETEROSTRUCTURES AND INFLUENCE OF PARASITIC CIRCUIT ELEMENTS
W. Saitoh et al., MULTIPLE NEGATIVE DIFFERENTIAL RESISTANCE DUE TO QUANTUM INTERFERENCEOF HOT-ELECTRON WAVES IN METAL (COSI2) INSULATOR (CAF2) HETEROSTRUCTURES AND INFLUENCE OF PARASITIC CIRCUIT ELEMENTS, JPN J A P 1, 34(8B), 1995, pp. 4481-4484
We report the observation of multiple negative differential resistance
(NDR) in a metal (CoSi2)/insulator (CaF2) resonant tunneling hot elec
tron transistor structure. Multiple NDR observed here can be attribute
d to the modulation of the transmission probability of hot electron wa
ves due to quantum interference in the conduction band of the insulato
r (CaF2) collector barrier layer between two metal (CoSi2) layers. By
reducing the influence of the Schottky diode at the CoSi2/Si interface
, relatively clear and low-voltage NDR is observed. It is found, by a
simulation including parasitic elements, that the collector resistance
and leakage current greatly influence the current voltage characteris
tics.