MULTIPLE NEGATIVE DIFFERENTIAL RESISTANCE DUE TO QUANTUM INTERFERENCEOF HOT-ELECTRON WAVES IN METAL (COSI2) INSULATOR (CAF2) HETEROSTRUCTURES AND INFLUENCE OF PARASITIC CIRCUIT ELEMENTS

Citation
W. Saitoh et al., MULTIPLE NEGATIVE DIFFERENTIAL RESISTANCE DUE TO QUANTUM INTERFERENCEOF HOT-ELECTRON WAVES IN METAL (COSI2) INSULATOR (CAF2) HETEROSTRUCTURES AND INFLUENCE OF PARASITIC CIRCUIT ELEMENTS, JPN J A P 1, 34(8B), 1995, pp. 4481-4484
Citations number
10
Categorie Soggetti
Physics, Applied
Volume
34
Issue
8B
Year of publication
1995
Pages
4481 - 4484
Database
ISI
SICI code
Abstract
We report the observation of multiple negative differential resistance (NDR) in a metal (CoSi2)/insulator (CaF2) resonant tunneling hot elec tron transistor structure. Multiple NDR observed here can be attribute d to the modulation of the transmission probability of hot electron wa ves due to quantum interference in the conduction band of the insulato r (CaF2) collector barrier layer between two metal (CoSi2) layers. By reducing the influence of the Schottky diode at the CoSi2/Si interface , relatively clear and low-voltage NDR is observed. It is found, by a simulation including parasitic elements, that the collector resistance and leakage current greatly influence the current voltage characteris tics.