SILICON-BASED SINGLE-ELECTRON-TUNNELING TRANSISTOR OPERATED AT 4.2-K

We have fabricated single-electron-tunneling transistors using silicon which is a useful material for device applications. The device is com posed of thin polycrystalline silicon him patterned by electron-beam l ithography and its thermally grown oxidized film. We have observed, in this device, periodic conductance oscillations as a function of gate voltage and nonlinear resistances as a function of drain voltage at 4. 2 K. These experimental results are in agreement with the theory of Co ulomb blockade. We conclude that the observed behavior results from th e charging energy of single-electron tunneling.