We have fabricated single-electron-tunneling transistors using silicon
which is a useful material for device applications. The device is com
posed of thin polycrystalline silicon him patterned by electron-beam l
ithography and its thermally grown oxidized film. We have observed, in
this device, periodic conductance oscillations as a function of gate
voltage and nonlinear resistances as a function of drain voltage at 4.
2 K. These experimental results are in agreement with the theory of Co
ulomb blockade. We conclude that the observed behavior results from th
e charging energy of single-electron tunneling.