STUDY OF INELASTIC-SCATTERING EFFECT IN UNSTRAINED AND STRAIN-COMPENSATED GAINAS GAINP MULTIQUANTUM BARRIERS/

The effect of inelastic scattering on electron reflection in multiquan tum barriers has been examined for the first time by using the damped resonant tunneling model. The electron reflectivity exhibits marked de terioration to values below unity at discrete energies in the virtual barrier. The largest dip in reflectivity is about 15% for an intraband relaxation time of 0.16 ps. It is also shown that this deterioration can be reduced by utilizing a strain-compensated superlattice in the m ultiquantum barriers.