GROWTH TEMPERATURE-DEPENDENCE OF BORON SURFACE SEGREGATION AND ELECTRICAL-PROPERTIES OF BORON DELTA-DOPED STRUCTURES GROWN BY SI MOLECULAR-BEAM EPITAXY
Y. Kumagai et al., GROWTH TEMPERATURE-DEPENDENCE OF BORON SURFACE SEGREGATION AND ELECTRICAL-PROPERTIES OF BORON DELTA-DOPED STRUCTURES GROWN BY SI MOLECULAR-BEAM EPITAXY, JPN J A P 1, 34(9A), 1995, pp. 4593-4598
Reflection high-energy electron diffraction (RHEED) intensity oscillat
ion showed a 4-monolayer (ML) period in the early stage of Si molecula
r beam epitaxy (MBE) on a 1 ML boron preadsorbed Si(111) surface, as l
ong as the surface-segregated boron coverage was more than 1/3 ML. Tem
perature dependence of the boron surface segregation was investigated
from the duration of the 4-ML-period oscillation. Effective solubility
of boron in Si was one order higher than those reported for 1/3 ML bo
ron preadsorbed cases. Crystallinity of the Si overlayer was satisfact
ory when the growth temperature was equal to or above 450 degrees C, a
nd 2/3 of the initially adsorbed boron atoms were confined to within a
bout 10 ML (about 16 Angstrom) of tile Si overlayer at 450 degrees C.
Boron preadsorption was found to saturate at 1 ML, and the temperature
dependence of the peak carrier concentration showed the same tendency
as that of the effective solubility.