INFLUENCE OF THE SEED FACE POLARITY ON THE SUBLIMATION GROWTH OF ALPHA-SIC

The influence of the face polarity of the seed crystal on the alpha-Si C sublimation growth has been investigated. Optical and electrical mea surements were carried out for undoped and nitrogen-doped crystals gro wn on the (000 $$($) over bar 1)C and the (0001)Si faces. The undoped crystal grown on the (000 $$($) over bar 1)C face showed n-type conduc tion and high optical transmittance in the visible light region. In co ntract, the undoped crystal grown on the (0001)Si face was highly resi stive p-type. It was dark in color and showed low optical transmittanc e. The differences between the two crystals are explained in terms of impurity incorporation during growth, which has different kinetics on the (000 $$($) over bar 1)C and the (0001)Si faces.