INFLUENCE OF MICROSTRUCTURE AND GRAIN-BOUNDARY POTENTIAL BARRIER LAYER ON THE ELECTRICAL BREAKDOWN OF POSITIVE TEMPERATURE-COEFFICIENT BATIO3 CERAMICS

Citation
Dh. Kim et al., INFLUENCE OF MICROSTRUCTURE AND GRAIN-BOUNDARY POTENTIAL BARRIER LAYER ON THE ELECTRICAL BREAKDOWN OF POSITIVE TEMPERATURE-COEFFICIENT BATIO3 CERAMICS, JPN J A P 1, 34(9A), 1995, pp. 4862-4869
Citations number
18
Categorie Soggetti
Physics, Applied
Volume
34
Issue
9A
Year of publication
1995
Pages
4862 - 4869
Database
ISI
SICI code
Abstract
The influence of the microstructure and the grain boundary potential b arrier layer on the electrical breakdown of barium titanate positive t emperature coefficient (PTC) ceramics was studied. Samples of various grain sizes were prepared by adjusting the amount of Sb substitution i nto Ba sites in barium titanate PTC ceramics. Samples exhibiting large PTC effect (R(max)/R(min)) and fine grain size withstand high applied voltage. It is clarified that grain size effect is related to the num ber of grain boundaries per unit thickness of the samples because the applied voltage drop is mainly across the potential barriers at grain boundaries. However, the voltage dependence of a single grain boundary potential barrier was more important in determining breakdown voltage in our study. The voltage dependence of the grain boundary potential barrier layer was due to the grain boundary built-in potential.