PBMGSRTE AND PBSRTESE FILMS PREPARED BY HOT-WALL EPITAXY

PbSrSe and PbSrTe films were prepared by hot-mall epitaxy, and their c haracteristics such as energy band gaps, lattice constants and electri cal properties were measured and compared with those of PbSrS. The ban d gaps of Pb1-xSrx Se and Pb1-xSrx Te films increase as dE(g)/dx = 2.5 eV and dE(g)/dx =3.6 eV, respectively. Deviation of the lattice const ant of PbSrSe from that of PbSe was very small with Sr composition les s than 10%, and PbSrSe/PbSe system is lattice-matched better than PbSr S/PbS system. On the other hand, the lattice constant of PbSrTe increa sed rapidly with Sr composition. New quaternary semiconductors such as Pb1-x-yMgxSryTe and Pb(1-x)Sr(x)Tel(1-y)Se(y) films lattice-matched t o PbTe were also prepared. Growth and characteristics of these films a re also presented.