PARAMETER DEPENDENCE OF STABLE STATE OF DENSELY CONTACT-ELECTRIFIED ELECTRONS ON THIN SILICON-OXIDE

We investigated the time evolution of a stable state which appeared in the dissipation of contact-electrified electrons. Here, four analytic al quantities in the stable state, i.e., initial (electrostatic) force F-o, critical force F-c, critical time t(c) at stable-unstable phase transition and time constant tau(1) of the stable state, were investig ated with respect to parameters of measurement (measurement voltage V- s and tip-sample distance Z) and contact elec trification (contact vol tage V-c and contact time t(o)). As a result, we found that measuremen t parameters do not affect time evolution of the stable state, whereas contact electrification parameters strongly affect it. Furthermore, w e obtained the approximated expression of the electrostatic force as a function of parameters on measurement and contact electrification, an d time after contact electrification.