Sa. Mansour et al., MICROSTRUCTURAL DEVELOPMENTS AND DIELECTRIC-PROPERTIES OF RAPID THERMALLY PROCESSED PZT THIN-FILMS DERIVED BY METALLOORGANIC DECOMPOSITION, Journal of the American Ceramic Society, 78(6), 1995, pp. 1617-1623
Microstructural developments and dielectric properties of lead zircona
te titanate thin films (0.22 mu m) with the composition Pb(Zr0.53Ti0.4
7)O-3 were studied. The films were prepared by metallo-organic decompo
sition (MOD) and rapid thermal processing (RTP) in the temperature ran
ge 475-825 degrees C for 2 min in an oxygen gas flow with and without
postannealing. An amorphous-pyrochlore-perovskite phase transformation
is indicated at or below 525 degrees C RTP temperatures while a direc
t amorphous-to-perovskite phase transformation is indicated at higher
RTP temperatures. A decrease in grain size with increasing temperature
is correlated with an increase in and dominance of nucleation of pero
vskite sites. The best dielectric and fatigue properties were exhibite
d by films processed in the temperature range 725-775 degrees C. Hyste
resis loops tended toward squareness and polarization charges increase
d with increased temperature, Furthermore, 45% of the initial charge r
emained after 10(9) switching reversals. A degradation, however, was o
bserved in both properties at higher temperatures.