A HIGH-PRECISION TECHNIQUE USING X-RAY REFLECTIVITY FOR THE MEASUREMENT OF SURFACE AND INTERFACE ROUGHNESS

Surface and interface roughness plays a crucial role in ultrathin two- dimensional layers. We have set up an X-ray reflectometry facility for the measurement of surface and interface roughness with a precision b etter than 1 Angstrom. As ion implantation is one of the techniques to fabricate ultrathin buried epitaxial layers, we have explored the eff ect of MeV ion implantation on surface roughness in two cases: Au-impl anted LiNbO3(001) and Co-implanted Si(111) samples. In both cases we h ave observed an implantation-induced enhancement of surface roughness. In addition, for the Co-implanted samples, we found unexpected interf erence fringes with dose-dependent periodicity.