DOPED SILVER-HALIDE LAYERS - RESPONSE TO E-BEAM IRRADIATION

The response of evaporated layers of doped AgBr to irradiation with el ectrons is studied. The sensitivity, gamma value and maximum density a re determined at various accelerating voltages. Resolution of 0.15 mu m wide lines is achieved at extremely high sensitivity -10(-9) C/cm(2) , which is 2 to 4 orders of magnitude higher than that of commercial r esists used in E-beam lithography. It is established that the distribu tion of latent image centres in the bulk of AgBr microcrystals is simi lar to that of exposure to visible light and X-ray. On this basis the mechanism of the photographic process is discussed.