SUPPRESSION OF TRANSIENT ENHANCED DIFFUSION FOLLOWING IN-SITU PHOTOEXCITATION DURING BORON ION-IMPLANTATION

The effect of in situ photoexcitation during boron ion implantation on subsequent transient enhanced B diffusion in Si has been investigated . Photoexcitation using a mercury arc lamp was performed during B+ imp lantation at 35 keV for a dose of 5X10(14) cm(-2) at 177 K. A reductio n in the electrical activation dip, i,e., reverse annealing effect, in the temperature range 550-700 degrees C was observed. Also, the trans ient enhanced diffusion of B, measured using SIMS following 800 degree s C, 30 min annealing, was suppressed. Both effects demonstrate that t he creation of self-interstitials during the implantation process is s ignificantly reduced. (C) 1995 American Institute of Physics.