COMPENSATING ACCEPTORS AND DONORS IN NITROGEN DELTA-DOPED ZNSE LAYERSSTUDIED BY PHOTOLUMINESCENCE AND PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY

The compensating accepters and donors in nitrogen delta-doped ZnSe epi layers grown by molecular beam epitaxy using a nitrogen rf-plasma sour ce are studied by means of photoluminescence (PL) and photoluminescenc e excitation spectroscopy (PLE). The temperature dependence of PL and PLE spectra obtained from the nitrogen delta-doped layers is investiga ted in detail, and a deep acceptor and a deep donor with ionization en ergies of similar to 170 and similar to 88 meV are reported for the ni trogen delta-doped layers. These two deep centers are assigned to N cl usters, i.e., N-Se-Zn-N-Se for the deep acceptor and N-Se-N-Zn for the deep donor. (C) 1995 American Institute of Physics.