ELECTRON-SPIN-RESONANCE EVIDENCE FOR THE STRUCTURE OF A SWITCHING OXIDE TRAP - LONG-TERM STRUCTURAL-CHANGE AT SILICON DANGLING BOND SITES IN SIO2

Authors
CONLEY JF LENAHAN PM LELIS AJ OLDHAM TR
Citation
Jf. Conley et al., ELECTRON-SPIN-RESONANCE EVIDENCE FOR THE STRUCTURE OF A SWITCHING OXIDE TRAP - LONG-TERM STRUCTURAL-CHANGE AT SILICON DANGLING BOND SITES IN SIO2, Applied physics letters, 67(15), 1995, pp. 2179-2181
Citations number
20
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
67
Issue
15
Year of publication
1995
Pages
2179 - 2181
Database
ISI
SICI code
0003-6951(1995)67:15<2179:EEFTSO>2.0.ZU;2-U
Abstract
We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide trap in thermally grown SiO2 ga te oxides on Si. Switching oxide traps can ''switch'' charge state in response to changes in the voltage applied to the gate of a metal-oxid e-semiconductor field-effect transistor. Electron spin resonance measu rements reveal that some E'(gamma) centers (a hole trapped at an oxyge n vacancy) can behave as switching oxide traps. (C) 1995 American Inst itute of Physics.