T. Saiki et al., SPATIALLY-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY OF LATERAL P-N-JUNCTIONS PREPARED BY SI-DOPED GAAS USING A PHOTON SCANNING TUNNELING MICROSCOPE, Applied physics letters, 67(15), 1995, pp. 2191-2193
An accurate correspondence between the local optical responses and the
structures of semiconductor light-emitting devices is demonstrated by
using an illumination-mode photon scanning tunneling microscope with
noncontact atomic force microscope technique. We study the novel-struc
tured lateral p-n junctions grown on patterned GaAs(111)A substrate. M
easuring the spatially resolved photoluminescence spectra with a 200 n
m apertured probe, we precisely determine the position and the width o
f the transition region of p-n junctions. The illumination-collection
hybrid mode is also employed to map the two-dimensional emission effic
iency with higher resolution, which is not affected by carrier diffusi
on. (C) 1995 American Institute of Physics.