MOLECULAR-BEAM EPITAXY GROWTH OF MGZNSSE ZNSSE BRAGG MIRRORS CONTROLLED BY IN-SITU OPTICAL REFLECTOMETRY/

In situ optical reflectometry at the wavelength of 488 nm was employed to control the growth of MgZnSSe/ZnSSe Bragg mirror stacks for the bl ue-green spectral region. 10- and 20-period layer structures of MgZnSS e/ZnSSe were grown on GaAs (100) epilayers by molecular beam epitaxy. A room-temperature peak reflectance of 86% was obtained for the 20-per iod structure at the central wavelength of 474 nm. The results show th at, in general, in situ optical monitoring of growth is a viable and s imple method for real-time layer thickness control of MgZnSSe/ZnSSe qu arter-wave stacks. (C) 1995 American Institute of Physics.