FREQUENCY-DEPENDENT HOLE DIFFUSION IN INGAAS DOUBLE HETEROSTRUCTURES

Two-dimensional diffusion of holes is studied in n-type InGaAs heteros tructures by frequency dependent measurements of the photoresponse in the periphery of a mesa diode. An analytical theory is presented that gives the spatial and frequency dependent photoresponse. Measurements agree well with theory and establish a hole diffusion length of 60 mu m, a hole recombination lifetime of 3 mu s, and a hole mobility of 480 cm(2)/V s for our material. An upper limit is also established for th e recombination velocity at the InP or InGaAsP heterointerfaces. (C) 1 995 American Institute of Physics.