We report the fabrication and characterization of zinc-indium-oxide fi
lms with similar electrical conductivity and better transparency in bo
th the visible and infrared compared with indium-tin-oxide, a widely u
sed transparent conductor in many technological applications. Dramatic
ally superior transmission properties in the 1-1.5 mu m range in parti
cular make zinc-indium-oxide attractive for use in infrared devices, w
here transparent electrodes are required. Resisitivities as low as 400
mu Omega cm result from doping with small quantities of Sn, Al, Ga, a
nd Ge are also effective dopants. Deposition on glass and quartz subst
rates as amorphous films by pulsed laser deposition and dc reactive sp
uttering is described. (C) 1995 American Institute of Physics.