LATTICE SITES OF ARSENIC IONS IMPLANTED IN DIAMOND

The lattice sites of As ions implanted in diamond and the annealing of implantation damage were investigated in emission channeling measurem ents. A dose of 1.0X10(13) cm(-2) Se-73 ions was implanted into IIa di amond at 300 K with an energy of 60 keV. Se-73 (t(12)=7.1 h) decays to As-73 (t(1/2)=80 d), which in turn decays to excited states in Ge-73. Channeling effects were measured on conversion electrons emitted in t he Ge-73 decay. Annealing studies in the range 873-1673 K showed an an nealing stage of the implantation damage setting in at 1100 K. Compari son of the measured effects with simulations based on the dynamical th eory of electron diffraction showed that after annealing at temperatur es above 1100 K, 55(5)% of the implanted ions were located on substitu tional lattice sites. (C) 1995 American Institute of Physics.