THEORY OF OPTICAL INTERBAND-TRANSITIONS IN STRAINED SI1-YCY GROWN PSEUDOMORPHICALLY ON SI(001)

Recently W. Kissinger, M. Weidner, H. J. Osten, and M. Eichler [Appl. Phys. Lett. 65, 3356 (1994)] reported ellipsometry and electroreflecta nce measurements on the E(0)', E(1), and E(2) critical point energies in strained Si1-yCy alloys grown pseudomorphically on Si (001) using m olecular-beam epitaxy. We present a theory explaining these energies u sing established deformation-potential theory and interpret the result s and their implications for the band structure of these alloys. (C) 1 995 American Institute of Physics.