HIGH-QUALITY INALAS GROWN ON INP SUBSTRATES BY MOLECULAR-BEAM EPITAXYAT VERY HIGH ARSENIC OVERPRESSURES

Authors
YOON SF MIAO YB RADHAKRISHNAN K SWAMINATHAN S
Citation
Sf. Yoon et al., HIGH-QUALITY INALAS GROWN ON INP SUBSTRATES BY MOLECULAR-BEAM EPITAXYAT VERY HIGH ARSENIC OVERPRESSURES, Journal of materials science letters, 14(19), 1995, pp. 1374-1376
Citations number
9
Categorie Soggetti
Material Science
Journal title
Journal of materials science letters → ACNP
ISSN journal
02618028
Volume
14
Issue
19
Year of publication
1995
Pages
1374 - 1376
Database
ISI
SICI code
0261-8028(1995)14:19<1374:HIGOIS>2.0.ZU;2-1