FULL-POTENTIAL PHOTOEMISSION CALCULATIONS FOR THE SI(100) SURFACE

Citation
M. Grass et al., FULL-POTENTIAL PHOTOEMISSION CALCULATIONS FOR THE SI(100) SURFACE, Journal of physics. Condensed matter, 7(40), 1995, pp. 7775-7780
Citations number
25
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09538984
Volume
7
Issue
40
Year of publication
1995
Pages
7775 - 7780
Database
ISI
SICI code
0953-8984(1995)7:40<7775:FPCFTS>2.0.ZU;2-L
Abstract
In this contribution, we have calculated angle-dependent photoelectron spectra from the Si(100) surface along the Gamma XWK bulk mirror plan e by excitation with unpolarized He-I radiation. For this theoretical investigation the full-potential photoemission theory has been used, w hich is a straightforward generalization of the one-step model of phot oemission in the case of anisotropic, space-filling cell potentials. T he crystal potential employed for the determination of the theoretical data has been calculated self-consistently within the full-potential Korringa-Kohn-Rostoker band structure method. The comparison with the corresponding experimental data shows a very good agreement for all bu lk transitions.