Based on the plasma dispersion effect of Si1-xGex, 2 x 2 bifurcation o
ptical active switches have been fabricated, in which the Si1-xGex was
grown by molecular beam epitaxy. At a 36mA injection current, the dev
ice reaches maximum optical switching. The crosstalk is less than -11d
B and the insertion loss is 3.8dB. The measured response time is <100n
s.