SIGE SI BIFURCATION OPTICAL ACTIVE SWITCH BASED ON PLASMA DISPERSION EFFECT/

Authors
GAO Y LI GZ LIU XD LIU EK ZHANG XJ LU XK HU JH WANG X
Citation
Y. Gao et al., SIGE SI BIFURCATION OPTICAL ACTIVE SWITCH BASED ON PLASMA DISPERSION EFFECT/, Electronics Letters, 31(20), 1995, pp. 1740-1741
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
20
Year of publication
1995
Pages
1740 - 1741
Database
ISI
SICI code
0013-5194(1995)31:20<1740:SSBOAS>2.0.ZU;2-1
Abstract
Based on the plasma dispersion effect of Si1-xGex, 2 x 2 bifurcation o ptical active switches have been fabricated, in which the Si1-xGex was grown by molecular beam epitaxy. At a 36mA injection current, the dev ice reaches maximum optical switching. The crosstalk is less than -11d B and the insertion loss is 3.8dB. The measured response time is <100n s.