TRUE CARRIER LIFETIME MEASUREMENTS OF SEMICONDUCTOR-LASERS

Authors
SHTENGEL GE ACKERMAN DA MORTON PA
Citation
Ge. Shtengel et al., TRUE CARRIER LIFETIME MEASUREMENTS OF SEMICONDUCTOR-LASERS, Electronics Letters, 31(20), 1995, pp. 1747-1748
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
20
Year of publication
1995
Pages
1747 - 1748
Database
ISI
SICI code
0013-5194(1995)31:20<1747:TCLMOS>2.0.ZU;2-N
Abstract
Differential carrier lifetimes of semiconductor lasers are obtained di rectly from the device impedance measurements. This new technique give s accurate lifetimes down to low bias currents, al which correct lifet imes are an order of magnitude higher than those obtained by a commonl y used optical technique. Correct lifetimes reconcile the results of e arly PL studies and suggest much higher carrier concentrations.