DEGRADATION MODE IN SEMICONDUCTOR OPTICAL MODULATORS

Authors
YUDA M FUKUDA M MIYAZAWA H
Citation
M. Yuda et al., DEGRADATION MODE IN SEMICONDUCTOR OPTICAL MODULATORS, Electronics Letters, 31(20), 1995, pp. 1778-1779
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
20
Year of publication
1995
Pages
1778 - 1779
Database
ISI
SICI code
0013-5194(1995)31:20<1778:DMISOM>2.0.ZU;2-2
Abstract
A degradation mode in Mach-Zehnder semiconductor optical modulators wi th InGaAs/InAlAs MQWs is investigated. The main accelerating factors a re the input optical power and the applied voltage in high stress test s. The main cause of degradation is found to be the destruction of the p-n junction on the side wall of the ridge waveguide. The time to fai lure is consequently expected to be >10(5)h under practical operating conditions in optical fibre transmission systems.