TIME-DEPENDENT 2ND-HARMONIC GENERATION FROM THE SI-SIO2 INTERFACE INDUCED BY CHARGE-TRANSFER

Authors
MIHAYCHUK JG BLOCH J LIU Y VANDRIEL HM
Citation
Jg. Mihaychuk et al., TIME-DEPENDENT 2ND-HARMONIC GENERATION FROM THE SI-SIO2 INTERFACE INDUCED BY CHARGE-TRANSFER, Optics letters, 20(20), 1995, pp. 2063-2065
Citations number
29
Categorie Soggetti
Optics
Journal title
Optics letters → ACNP
ISSN journal
01469592
Volume
20
Issue
20
Year of publication
1995
Pages
2063 - 2065
Database
ISI
SICI code
0146-9592(1995)20:20<2063:T2GFTS>2.0.ZU;2-E
Abstract
We have observed that the second-harmonic signal generated from oxidiz ed Si(001) varies on a time scale of several seconds in experiments in volving a fundamental beam of lambda = 770 nm, 110-fs pulses at 76 MHz . We suggest that the temporal behavior arises from absorption of weak (< 100-fW average power) third-harmonic light generated in air or in the sample, inducing charge transfer across the Si-SiO2 interface and trapping in the oxide layer. Detrapping has been determined to take se veral minutes. (C) 1995 Optical Society of America