STRUCTURAL, MAGNETOTRANSPORT AND ELECTRONIC SUBBAND STUDIES IN A MODULATION-DOPED IN0.65GA0.35AS IN0.52AL0.48AS STRAINED SINGLE-QUANTUM-WELL/

Shubnikov-de Haas (SdH) and Van der Pauw Hall effect measurements on a lattice-mismatched In0.65Ga0.35As/In0.52Al0.48As one-side-modulation- doped single quantum well grown by metalorganic chemical vapour deposi tion have been carried out to investigate the electrical properties of an electron gas and to determine the subband carrier densities, the s ubband energies and the wavefunctions in a strained In0.65Ga0.35As qua ntum well. Transmission electron microscopy measurements show that the ln(0.65)Ga(0.35)As/In0.52Al0.48As heterointerfaces have no misfit dis locations. The SdH measurements at 1.5 K and fast Fourier transformati on of the data show that a two-dimensional electron gas occupied three subbands in the well. The electronic subband energies and the wavefun ctions in the quantum well have been calculated by a self-consistent m ethod using the transfer matrix method based on the envelope-function approximation. The self-consistent calculation was performed taking in to account exchange-correlation effects together with strain effects.