Up. Singh et al., DONOR STATES IN PD P-GAAS DEVICES AND THE EFFECT OF HYDROGENATION/, Semiconductor science and technology, 10(10), 1995, pp. 1368-1375
The effect of hydrogenation on a Pd/p-GaAs diode in hydrogen gaseous a
mbient has been studied by I-V and C-V measurements. Hydrogenation has
been found to improve the ideality factor of the diode. Reverse C-V c
haracteristics show that the number of shallow and deep accepters is r
educed on hydrogenation. The forward C-V characteristics has shown the
presence of interfacial deep donors at E(c) - 1.05 eV and E(c) - 0.88
eV, the density of which decreased on hydrogenation. The observed res
ults are discussed in terms of the interaction of the diffusing hydrog
en with the interface and bulk states of the Pd/GaAs structure.