DONOR STATES IN PD P-GAAS DEVICES AND THE EFFECT OF HYDROGENATION/

Authors
SINGH UP SRIVASTAVA PC CHANDRA S
Citation
Up. Singh et al., DONOR STATES IN PD P-GAAS DEVICES AND THE EFFECT OF HYDROGENATION/, Semiconductor science and technology, 10(10), 1995, pp. 1368-1375
Citations number
24
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
10
Issue
10
Year of publication
1995
Pages
1368 - 1375
Database
ISI
SICI code
0268-1242(1995)10:10<1368:DSIPPD>2.0.ZU;2-#
Abstract
The effect of hydrogenation on a Pd/p-GaAs diode in hydrogen gaseous a mbient has been studied by I-V and C-V measurements. Hydrogenation has been found to improve the ideality factor of the diode. Reverse C-V c haracteristics show that the number of shallow and deep accepters is r educed on hydrogenation. The forward C-V characteristics has shown the presence of interfacial deep donors at E(c) - 1.05 eV and E(c) - 0.88 eV, the density of which decreased on hydrogenation. The observed res ults are discussed in terms of the interaction of the diffusing hydrog en with the interface and bulk states of the Pd/GaAs structure.