MODELING THE TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT, EXTERNAL DIFFERENTIAL EFFICIENCY AND LASING WAVELENGTH IN QW LASER-DIODES

The temperature behaviour of GaAs/GaAlAs DQW-GRINSCH high-power laser diodes is calculated by means of a numerical model. The model includes a microscopic description of gain and spontaneous radiative recombina tion, a phenomenological description of interface and Auger recombinat ion, and includes a pumping-current-dependent leakage. Based on the mo del, the temperature dependences of the macroscopic parameters of thre shold current, external differential efficiency and wavelength are cal culated. The resulting numerical values for these parameters are in ex cellent agreement with our experiments. Spontaneous radiative recombin ation is shown to be the dominant loss mechanism.