U. Menzel et al., MODELING THE TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT, EXTERNAL DIFFERENTIAL EFFICIENCY AND LASING WAVELENGTH IN QW LASER-DIODES, Semiconductor science and technology, 10(10), 1995, pp. 1382-1392
The temperature behaviour of GaAs/GaAlAs DQW-GRINSCH high-power laser
diodes is calculated by means of a numerical model. The model includes
a microscopic description of gain and spontaneous radiative recombina
tion, a phenomenological description of interface and Auger recombinat
ion, and includes a pumping-current-dependent leakage. Based on the mo
del, the temperature dependences of the macroscopic parameters of thre
shold current, external differential efficiency and wavelength are cal
culated. The resulting numerical values for these parameters are in ex
cellent agreement with our experiments. Spontaneous radiative recombin
ation is shown to be the dominant loss mechanism.