A NEW MODEL FOR CODIFFUSION IN POLYCRYSTALLINE SILICON SPECIFIED TO BICMOS TECHNOLOGY

Authors
GONTRAND C HADDAB Y KAABI L MERABET A
Citation
C. Gontrand et al., A NEW MODEL FOR CODIFFUSION IN POLYCRYSTALLINE SILICON SPECIFIED TO BICMOS TECHNOLOGY, Semiconductor science and technology, 10(10), 1995, pp. 1393-1403
Citations number
30
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
10
Issue
10
Year of publication
1995
Pages
1393 - 1403
Database
ISI
SICI code
0268-1242(1995)10:10<1393:ANMFCI>2.0.ZU;2-0
Abstract
Although processes in the polysilicon layers are very important in CMO S-compatible bipolar technology, there remains a particular need for i mproved modelling of diffusion in this field. A simulation model for d opant codiffusion in polycrystalline silicon is developed, taking into account the grain itself, as well as the grain boundary, and the exch ange between these two regions.