COMBINED RAMAN AND LUMINESCENCE ASSESSMENT OF EPITAXIAL 6H-SIC FILMS GROWN ON 6H-SIC BY LOW-PRESSURE VERTICAL CHEMICAL-VAPOR-DEPOSITION

Raman scattering and photoluminescence (PL) under near-UV excitations were used to assess the 6H-SiC films epitaxied on 6H-SiC by low pressu re vertical chemical vapour deposition (LPV-CVD). Raman linewidths and relative intensities with respect to the PL emissions were used to ch aracterize the quality of the 6H-SiC films. Ti-related PL and outgoing resonance Raman scattering were studied. Samples grown by LPV-CVD wit h different growth parameters were compared on the basis of their Rama n-PL spectra. This study showed that a combination of Raman and PL mea surements can be used as a convenient method to assess the 6H-SiC/6H-S iC homoepitaxial structures.