ELECTRONIC-STRUCTURE OF BURIED SI LAYERS IN GAAS(001) AS STUDIED BY SOFT-X-RAY EMISSION

Authors
NILSSON PO KANSKI J THORDSON JV ANDERSSON TG NORDGREN J GUO J MAGNUSON M
Citation
Po. Nilsson et al., ELECTRONIC-STRUCTURE OF BURIED SI LAYERS IN GAAS(001) AS STUDIED BY SOFT-X-RAY EMISSION, Physical review. B, Condensed matter, 52(12), 1995, pp. 8643-8645
Citations number
12
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
52
Issue
12
Year of publication
1995
Pages
8643 - 8645
Database
ISI
SICI code
0163-1829(1995)52:12<8643:EOBSLI>2.0.ZU;2-C
Abstract
It is demonstrated that it is possible to investigate details of the e lectronic structure of an internal atomic monolayer using soft-x-ray-e mission spectroscopy. The local and partial density of states of one m onolayer and three monolayers of Si, embedded deep below a GaAs(001) s urface, was extracted. Clear differences to the density of states for bulk Si were observed.