STRAIN EFFECTS ON INGAP-INGAASP-GAASP TENSILE-STRAINED QUANTUM-WELL LASERS

Authors
UPPAL K MATHUR A DAPKUS PD
Citation
K. Uppal et al., STRAIN EFFECTS ON INGAP-INGAASP-GAASP TENSILE-STRAINED QUANTUM-WELL LASERS, IEEE photonics technology letters, 7(10), 1995, pp. 1128-1130
Citations number
8
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
7
Issue
10
Year of publication
1995
Pages
1128 - 1130
Database
ISI
SICI code
1041-1135(1995)7:10<1128:SEOITQ>2.0.ZU;2-Z
Abstract
Tensile strained InGaP-InGaAsP-GaAsP single quantum well broad area la sers have been grown by metalorganic chemical vapor deposition and the effects of strain on the device parameters bane been studied, The las ing mode is found to be TE for a strain of -0.46% and TM for a strain of -0.71%. The role of barrier height in controlling gain and temperat ure dependence in this system is measured. A low threshold current den sity of 221 A/cm(2) has been obtained for a cavity length of 2.34 mm w ith -0.46% strain.